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| HAT1127H Silicon P Channel Power MOS FET Power Switching REJ03G1330-0500 Rev.5.00 Jan 20, 2006 Features * * * * Capable of -4.5 V gate drive Low drive current High density mounting Ultra Low on-resistance RDS(on) = 3.6 m typ. (at VGS = -10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 ch-c Note2 Tch Tstg Ratings -30 -20/+10 -40 -160 -40 30 4.17 150 -55 to +150 Unit V V A A A W C/W C C Rev.5.00 Jan 20, 2006 page 1 of 6 HAT1127H Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min -30 -- -- -1.0 -- -- 40 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 3.6 5.3 70 5600 1180 890 125 15 28 25 40 130 115 -0.88 120 Max -- 0.1 -1 -2.5 4.5 7.7 -- -- -- -- -- -- -- -- -- -- -- -1.15 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 VGS = -20/+10 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA ID = -20 A, VGS = -10 V Note3 ID = -20 A, VGS = -4.5 V Note3 ID = -20 A, VDS = -10 V Note3 VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, VGS = -10 V, ID = -40 A VGS = -10 V, ID = -20 A, VDD -10 V, RL = 0.5 , Rg = 4.7 IF = -40 A, VGS = 0 Note3 IF = -40 A, VGS = 0 diF/ dt = 100 A/ s Rev.5.00 Jan 20, 2006 page 2 of 6 HAT1127H Main Characteristics Power vs. Temperature Derating 40 -500 -100 30 10 0 s 1m s PW s DC = 10 m Op era s tio n Maximum Safe Operation Area Pch (W) Drain Current ID (A) 10 Channel Dissipation -10 20 -1 Operation in this area is limited by RDS(on) 10 -0.1 Ta = 25C 1 shot Pulse 0 50 100 150 200 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Case Temperature Tc (C) Drain to Source Voltage VDS (V) -10 V Typical Output Characteristics -4.5 V -2.9 V -3.0 V Typical Transfer Characteristics -50 VDS = -10 V Pulse Test -50 -2.8 V -2.7 V Drain Current ID (A) -30 -2.6 V Drain Current ID (A) -40 -40 -30 Tc = 75C -20 -2.5 V VGS = -2.4 V -20 -10 Pulse Test -10 25C -25C 0 -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -0.20 Pulse Test -0.16 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (m) 100 Pulse Test 50 Drain to Source Voltage VDS(on) (V) -0.12 ID = -20 A -10 A -5 A 0 -4 -8 -12 -16 -20 20 10 5 -10 V 2 1 -0.1 -0.2 -0.5 -1 -2 VGS = -4.5 V -0.08 -0.04 -5 -10 -20 -50 -100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Jan 20, 2006 page 3 of 6 HAT1127H Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 200 100 Tc = -25C 30 75C 10 3 1 VDS = -10 V Pulse Test -1 -3 -10 -30 -100 25C 12 ID = -5 A, -10 A, -20 A 8 VGS = -4.5 V 4 -10 V 0 -40 0 40 -5 A, -10 A, -20 A 80 120 160 0.2 -0.1 -0.3 Case Temperature Tc (C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 30000 10000 Reverse Recovery Time trr (ns) 1000 500 Capacitance C (pF) Ciss 3000 1000 300 100 30 0 Coss Crss 200 100 50 di/dt = -100 A/s VGS = 0, Ta = 25C -1 -3 -10 -30 -100 20 10 -0.1 -0.3 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Switching Characteristics Drain to Source Voltage VDS (V) -10 -4 Switching Time t (ns) VDD = -5 V -10 V -25 V VDD = -25 V -10 V -5 V VDS VGS Gate to Source Voltage VGS (V) 0 0 200 td(off) 100 tf 50 tr 20 10 td(on) VGS = -10 V, VDS = -10 V Rg = 4.7 , duty 1 % -2 -5 -10 -20 -50 -20 -8 -30 -12 -40 ID = -40 A -50 0 40 80 120 160 -16 -20 200 5 -0.1 -0.2 -0.5 -1 Gate Charge Qg (nc) Drain Current ID (A) Rev.5.00 Jan 20, 2006 page 4 of 6 HAT1127H Reverse Drain Current vs. Source to Drain Voltage -50 Reverse Drain Current IDR (A) -40 -10 V -5 V VGS = 0 -30 -20 -10 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - f(t) = s (t) x ch - f ch - f = 4.17C/W, Tc = 25C PDM p ot uls e 0.05 0.03 0.02 1 0.0 1 sh D= PW T PW T 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Vin Monitor Rg D.U.T. RL Vout Monitor 10% Waveform 90% 90% 90% Vin -10 V VDD = -10 V Vout td(on) 10% tr td(off) 10% tf Rev.5.00 Jan 20, 2006 page 5 of 6 HAT1127H Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 0.2 5 0.25 -0.03 +0.05 3.3 1.0 3.95 1 4 6.1 -0.3 +0.1 0 - 8 1.1 Max +0.03 0.07 -0.04 0.75 Max 1.27 0.10 0.40 0.06 0.25 M 0.6 -0.20 1.3 Max +0.25 0.20 -0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name HAT1127H-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 20, 2006 page 6 of 6 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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